sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SCTH100N65G2-7AG
Brand:ST
Particular Year:23+
Package:H2PAK-7
Delivery Date:New and original
Stock: 3000pcs
The SCTH100N65G2-7AG 650V automotive grade Silicon Carbide power MOSFET device is developed using ST's advanced and innovative 2nd generation SiC MOSFET technology. The device has a very low on-resistance per unit area and very good switching performance. The change of switching loss is almost independent of junction temperature.
Product attribute
FET type: N channel
Technology: SiCFET (Silicon carbide)
Drain-source voltage (Vdss) : 650 V
Current at 25°C - Continuous Drain (Id) : 95A (Tc)
Drive voltage (Max Rds On, min Rds On) : 18V
On-resistance (Max.) at different ids and Vgs: 26 milliohm @ 50A, 18V
Vgs(th) (Max.) : 5V@5mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 162 N@18 V
Vgs (Max) : +22V, -10V
Input capacitance (Ciss) at different Vds (Max.) : 3315 PF-@520V
FET function: -
Power dissipation (Max.) : 360W (Tc)
Operating temperature: -55°C ~ 175°C (TJ)
Class: Automobile class
Qualification: AEC-Q101
Mounting type: Surface mount type
Supplier device package: H2PAK-7
Package/housing: TO-263-8, D2PAK (7-lead + flange), TO-263CA
Basic product number: SCTH100
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
3000
650V, 25mohm, N-Channel - EliteSiC, Silicon Carbide (SiC) MOSFET Transistor
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
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