sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SCT060HU75G3AG
Brand:ST
Particular Year:23+
Package:HU3PAK
Delivery Date:New and original
Stock: 3000pcs
The SCT060HU75G3AG Silicon Carbide power MOSFET device is developed using ST's advanced and innovative third generation SiC MOSFET technology. The device has extremely low RDS (on) over the entire temperature range, which, combined with low capacitance and extremely high switching operation, improves application performance in terms of frequency, energy efficiency, system size and weight reduction.
Product attribute
FET type: N channel
Technology: SiC (Silicon carbide junction transistor)
Drain-source voltage (Vdss) : 750 V
Current at 25°C - Continuous drain (Id) : 30A (Tc)
Driving voltage (Max Rds On, min Rds On) : 15V, 18V
On-resistance (maximum) at different ids and Vgs: 78mOhm@15A, 18V
Vgs(th) (Max.) : 4.2V@1mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 29 NC-@18 V
Vgs (Max.) : 4.2V@ 1mA
Input capacitance (Ciss) for different Vds (Max.) : 680 PF-@400 V
FET function: -
Power dissipation (Max.) : 185W (Tc)
Operating temperature: -55°C ~ 175°C (TJ)
Mounting type: Surface mount type
Supplier device package: HU3PAK
Package/housing: TO-263-8, D2PAK (7-lead + flange), TO-263CA
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
3000
650V, 25mohm, N-Channel - EliteSiC, Silicon Carbide (SiC) MOSFET Transistor
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
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