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Trade Name:LMG3422R050RQZR
Data Manual:LMG3422R050RQZR.pdf
Brand:TI
Particular Year:21+
Package:VQFN54
Delivery Date:New and Original
Stock: 2000pcs
The LMG3422R050RQZR GaN FETs feature integrated driver and protection features, allowing designers to achieve higher levels of power density and efficiency in power electronics systems.
The LMG3422R050RQZR integrates a silicon driver that enables switching speeds of up to 150 V/ns. TI's integrated precision gate biasing enables higher switching SOA compared to discrete silicon gate drivers. This integrated feature, combined with TI's low-inductance packaging technology, provides clean switching and ultra-low ringing in hard-switched power supply topologies. Adjustable gate drive strength allows slew rate control from 20 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3425R050 includes an ideal diode mode that reduces third-quadrant losses by enabling adaptive dead-time control.
Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies device loading management. Reported faults include overtemperature, overcurrent, and UVLO monitoring.
Characteristic
• Compliant with JEDEC JEP180 for hard switching topologies
• 600-V GaN-on-Si FET with integrated gate driver
Integrated high precision gate bias voltage
200V/ns CMTI
3.6MHz switching frequency
20V/ns to 150V/ns slew rate for optimized switching performance and EMI mitigation
Operates from 7.5V to 18V Supply
• Strong protection
Cycle-by-cycle overcurrent and latched short-circuit protection with less than 100 ns response time
Withstands 720V surge when hard switching
Self-protection against internal overtemperature and UVLO monitoring
• Advanced Power Management
Digital temperature PWM output
Ideal diode mode reduces third quadrant losses in LMG3425R050
Model
Brand
Package
Quantity
Describe
TI
52-VQFN
2222
650V 50mΩ GaN FET with integrated drive, protection and temperature reporting
TI
52-VQFN
2222
650V 50mΩ GaN FET with integrated driver, protection and zero voltage detection reporting
ST
31-QFN
2000
High power density 6.5A half-bridge drivers with two enhanced GaN HEMTs, 31QFN
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Texas Instruments (TI), abbreviated as TI, is the worlds leading semiconductor company providing innovative digital signal processing (DSP) and analog device technologies for real-world signal processing. In addition to the semiconductor business, it …
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