sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:S80KS2562GABHM023
Data Manual:S80KS2562GABHM023.pdf
Brand:INFINEON
Particular Year:23+
Package:24-VBGA
Delivery Date:Brand new and original
Stock: 3000pcs
S80KS2562GABHM023 Memory Chip 24FBGA Pseudo SRAM Memory
Product Description Of S80KS2562GABHM023
S80KS2562GABHM023 is HYPERRAM™ self-refresh dynamic, RAM (DRAM) with HYPERBUS™ interface. The HYPERBUS™ interface has an 8-bit (1 byte) wide DDR data bus and use only word-wide (16-bit data) address boundaries.
Product Attributes
Memory Type:Volatile
Memory Format:PSRAM
Technology:PSRAM (Pseudo SRAM)
Memory Size:256Mbit
Memory Organization:32M x 8
Memory Interface:HyperBus
Clock Frequency:200 MHz
Write Cycle Time - Word, Page:35ns
Access Time:35 ns
Voltage - Supply:1.7V ~ 2V
Operating Temperature:-40°C ~ 125°C (TA)
Features
Performance, power, and packages
200-MHz maximum clock rate
DDR - transfers data on both edges of the clock
Data throughput up to 400 MBps (3,200 Mbps)
Configurable burst characteristics
Model
Brand
Package
Quantity
Describe
INFINEON
48-VFBGA
3000
Ram - Asynchronous memory IC 8Mb in parallel 55ns 48-VFBGA (6x8)
INFINEON
48-VFBGA
3000
Ram - Asynchronous memory IC 8Mb in parallel 55ns 48-VFBGA (6x8)
INFINEON
48-VFBGA
3000
Ram - Asynchronous memory IC 8Mb in parallel 45ns 48-VFBGA (6x8)
INFINEON
48-VFBGA
3000
Ram - Asynchronous memory IC 16Mb parallel 45 ns 48-VFBGA (6x8)
INFINEON
48-FBGA
3000
Ram - Asynchronous memory IC 32Mb parallel 55 ns 48-FBGA (6x8)
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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