sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SRAM Memory
Brand:INFINEON
Particular Year:25+
Package:FBGA-165
Delivery Date:New and Original
Stock: 2000pcs
CY7C2644KV18-333BZXI is 1.8 V synchronous pipelined SRAMs, equipped with QDR II+architecture.
Features Of CY7C2644KV18-333BZXI
Separate independent read and write data ports
Supports concurrent transactions
250 MHz clock for high bandwidth
Two-word burst for reducing address bus frequency
Double data rate (DDR) interfaces on both read and write ports (data transferred at 500 MHz) at 250 MHz
Available in 2.0 clock cycle latency
Two input clocks for precise DDR timing
SRAM uses rising edges only
Echo clocks simplify data capture in high-speed systems
Data valid pin (QVLD) to indicate valid data on the output
On-die termination (ODT) feature
Single multiplexed address input bus latches address inputs for both read and write ports
Separate port selects for depth expansion
Quad data rate II+ operates with 2.0 cycle read latency when DOFF is asserted high
Operates similar to QDR I device with one cycle read latency when DOFF is asserted low
Core VDD = 1.8 V± 0.1 V; I/O VDDQ = 1.4 V to VDD
Supports both 1.5 V and 1.8 V I/O supply
High-speed transceiver logic (HSTL) inputs and variable drive HSTL output buffers
Available in 165-ball CCGA (21 × 25 × 2.83 mm)
JTAG 1149.1 compatible test access port
Phase Locked Loop (PLL) for accurate data placement
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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