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Service Telephone:86-755-83294757
Trade Name:ISZ113N10NM5LFATMA1
Data Manual:ISZ113N10NM5LFATMA1.pdf
Brand:INFINEON
Particular Year:23+
Package:TSDSON-8
Delivery Date:New original
Stock: 1000pcs
ISZ113N10NM5LFATMA1 OptiMOS™ 5 linear FETs have very low on-resistance and 100V VDS. The portfolio includes 11.3mΩ low on-resistance RDS(on). The device is available in TDSON-8FL or S3O8 and operates in a temperature range of -55°C to 175°C.
Product Attributes:
FET type: N channel
Technology: MOSFET (Metal oxide)
Drain-source voltage (Vdss) : 100 V
Current at 25°C - Continuous drain (Id) : 10A (Ta), 63A (Tc)
Drive voltage (Max Rds On, min Rds On) : 10V
On-resistance (Max.) at different ids and Vgs: 11.3 milliohm @ 20A, 10V
Vgs(th) (Max.) for different ids: 3.9V@36µA
Gate charge (Qg) at different Vgs (Max.) : 29 NC-@10 V
Vgs (Max.) : ±20V
Input capacitance (Ciss) at different Vds (Max.) : 2300 PF-@ 50 V
FET function: -
Power dissipation (Max) : 2.5W (Ta), 100W (Tc)
Operating temperature: -55°C ~ 175°C (TJ)
Mounting type: Surface mount type
Supplier device package: PG-TSDSON-8 FL
Package/housing: 8-PowerTDFN
Model
Brand
Package
Quantity
Describe
INFINEON
PG-TDSON-8
10000
Силовой MOSFET OptiMOS™ 6 40 В нормального уровня с новейшей технологией Infineon
INFINEON
PG-TDSON-8
30000
N-channel power MOSFET 25 V 39 A (Ta), 58 A (Tc) 2.5 W (Ta), 28 W (Tc) PG-TDSON-8-5
INFINEON
PG-TDSON-8
20000
N-channel power MOSFET 25 V 33 A (Ta), 100 A (Tc) 2.5 W (Ta), 50 W (Tc) PG-TDSON-8-6
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