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BSC050NE2LS is an N-channel enhancement-mode power MOSFET belonging to the OptiMOS™ 5 series. This device is packaged in a PG-TDSON-8 package and features ultra-low on-resistance (RDS(on)) and high current-carrying capability, making it suitable for high-efficiency power management, motor drives, server VRMs (voltage regulation modules), and other applications.

BSC050NE2LS Features

Low on-resistance: 4.2mΩ @ 10V VGS (maximum 5mΩ @ 30A), significantly reducing power loss.

Continuous drain current (ID): 39A (Ta) / 58A (Tc).

Peak pulse current (IDRM): 232A (short-term pulse).

Low gate charge (Qg): 10.4nC @ 10V, reducing switching losses.  

Rise time 2.2ns, fall time 2ns, suitable for high-frequency applications.  

Operating temperature range: -55°C to +150°C (TJ).  

Compliant with AEC-Q101 automotive-grade certification, suitable for harsh environments.

Compact package: PG-TDSON-8 (5×6 mm) surface-mount package, suitable for high-density PCB designs.

BSC050NE2LS Specifications

Brand: Infineon

Package: PG-TDSON-8 (5×6 mm)

Channel type: N-channel enhancement mode  

Drain-source voltage (VDS):    25V  

Continuous drain current (ID):    39A (Ta) / 58A (Tc)  

On-resistance (RDS(on)):    4.2mΩ @ 10V (typical), 5mΩ @ 10V (maximum)

Gate Charge (Qg):    10.4nC @ 10V  

Input Capacitance (Ciss):    760pF @ 12V  

Gate-Source Voltage (VGS):    ±20V (Maximum)  

Threshold Voltage (VGS(th)):    2V @ 250µA

Maximum power dissipation (PD):    2.5W (Ta) / 28W (Tc)

Switching time: Rise time 2.2ns, fall time 2ns

Operating temperature range:    -55°C to +150°C (TJ)

Compliance standards: RoHS, lead-free, AEC-Q101 (automotive grade)

Packaging: Tape and reel

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