sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:A1F25M12W2-F1
Data Manual:A1F25M12W2-F1.pdf
Brand:ST
Particular Year:23+
Package:MODULE
Delivery Date:New and Original
Stock: 1000pcs
A1F25M12W2-F1 This power supply module utilizes a four-group topology in the ACEPACK 1 module with NTC and integrates ST's state-of-the-art Silicon Carbide MOSFETs (represented by gen.2 technology). This modular solution can be used to realize complex topologies characterized by very high power densities to meet the highest efficiency requirements.
Product Attributes
Technology: Silicon Carbide (SiC)
Configuration: 4 N-channels
FET Function: Silicon Carbide (SiC)
Drain-source voltage (Vdss): 1200V
Current at 25°C - Continuous Drain (Id): 50A
On-resistance (max) at different Id, Vgs: 34 milliohms @ 50A, 18V
Vgs(th) at different Id (max): 4.9V @ 5mA
Gate Charge (Qg) at Vgs (max): 147nC @ 18V
Input Capacitance (Ciss) (Max) at Vds: 3500pF @ 800V
Operating Temperature: 175°C (TJ)
Mounting Type: Chassis Mount
Package/Housing: Module
Supplier Device Package: ACEPACK 1
Applications
- DC/DC converters
- High-frequency switching applications
- Welding
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