sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:MSCSM120HM16T3AG
Brand:Microchip
Particular Year:24+
Package:Module
Delivery Date:New and Orignal
Stock: 1000pcs
The MSCSM120HM16T3AG devices are full-bridge 1200V, 173A silicon carbide (SiC) power modules. Features SiC power MOSFETs, low RDS (conduction), high temperature performance, Kelvin source, and easy drive. Low stray inductance, high efficiency converter, excellent performance at high frequency operation, stable temperature characteristics, direct mount to heatsink (isolated package), low case thermal resistance, RoHS compliant.
Product Characteristics
Technology: Silicon Carbide (SiC)
Configuration: 4 N-Channel (Full Bridge)
Drain-to-source voltage (Vdss): 1200 V (1.2 kV)
Current at 25°C - Continuous Drain (Id): 173A (Tc).
Switching Resistance (Max) at Different Id, Vgs: 16 mOhm @ 80A, 20V
Vgs(th) at different Id (max): 2.8V @ 6mA
Gate charge (Qg) at Vgs (max): 464nC @ 20V 464nC @ 20V
Input Capacitance (Ciss) at Vds (max): 6040pF @ 1000V 6040pF @ 1000V
Power - Max: 745W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Packaging/Enclosure: Module
Applications
● Uninterruptible Power Supplies
●Welding converters
●Switching power supplies
●Electric vehicle motors and traction drives
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