sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGQ120N120S7
Data Manual:IGQ120N120S7.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-247-3
Delivery Date:New original
Stock: 1000pcs
IGQ120N120S7 1200V, 120A TRENCHSTOP™ IGBT7 The S7 is an efficient, short-circuit-resistant, discrete IGBT single-tube device in the TO-247 package that offers low saturation voltage drop (VCEsat) for ultra-low on-off losses in target applications.
specification
Product category: IGBT transistor
Technology: Si
Package/housing: TO-247-3
Installation style: Through Hole
Configuration: Single
Collector-emitter maximum voltage VCEO: 1.2kV
Collector-emitter saturation voltage: 1.65V
Maximum grid/emitter voltage: -20 V, 20 V
Continuous collector current at 25 C: 216 A
Pd- Power dissipation: 1.004 kW
Minimum operating temperature: -40 °C
Maximum operating temperature: + 175°C
Series: TRENCHSTOP IGBT7 S7
Package: Tube
Trademark: Infineon Technologies
Grid-emitter leakage current: 100 nA
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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