sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NCD57090DDWR2G
Data Manual:NCD57090DDWR2G.PDF
Brand:ON
Particular Year:23+
Package:8-SOIC
Delivery Date:New and Original
Stock: 1000pcs
The NCD57090DDWR2G are high current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and high reliability in high power applications. These devices accept complementary inputs and, depending on pin configuration, offer options such as active Miller clamp (versions A/D/F), negative supply (version B), and independent high and low level (OUTH and OUTL) driver outputs (versions C/E) to facilitate system design. The drivers accommodate a wide range of input bias voltages and signal levels (3.3 V to 20 V).
Product Attributes
Technology: Capacitively coupled
Number of Channels: 1
Voltage - Isolation: 5000 Vrms
Common mode transient immunity (min): 100 kV/µs (max)
Propagation Delay tpLH / tpHL (max): 90ns, 90ns
Pulse Width Distortion (max): 25ns
Rise / Fall Time (typical): 13ns, 13ns
Current - Output High, Low: 6.5A, 6.5A
Current - Peak Output: 6.5A
Voltage - Output Supply: 0V ~ 32V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package/Shell: 8-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 8-SOIC
Certification Body: VDE
Applications
● Motor control
● Uninterruptible Power Supplies (UPS)
● Automotive applications
● Industrial power supplies
● Solar inverters
Model
Brand
Package
Quantity
Describe
BROADCOM
SO-16
2000
Automotive 2.5A Gate-Drive Optocoupler with Integrated IGBT Desat Overcurrent Sensing
BROADCOM
SO-16
2000
Automotive 2.5A MOSFET Gate Drive Optocoupler with Integrated Desat Over Current Sensing
BROADCOM
SO-16
2000
Automotive 2.5A Gate Drive Optocoupler with Integrated Flyback Controller
ST
24-SOIC
1000
Gate Driver Channel 24-SO Automotive Galvanically Isolated Single Gate Driver
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
UJ3C120040K3S
UJ3C120040K3S SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The devices standard gate-drive characteristics allows for …UJ3C120070K3S
UJ3C120070K3S SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The devices standard gate-drive characteristics allows for …UF3C120040K3S
UF3C120040K3S SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The devices standard gate-drive characteristics allows for a…UF3C120040K4S
UF3C120040K4S is high-performance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This exhibits very fast switching using a 4-terminal T0247- package and the best reverse recove…UJ3C065030B3
UJ3C065030B3 SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The devices standard gate-drive characteristics allows for a true…NVH4L050N170M1
NVH4L050N170M1: 1700V, 45A, 53mohm, Silicon Carbide (SiC) N-Channel MOSFET Transistor, TO-247-4Model: NVH4L050N170M1Package: TO-247-4Type: Silicon Carbide (SiC) MOSFET TransistorNVH4L050N170M1 Specifications:FET Type: N-ChannelTechnology: SiC (Silicon…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: