sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NCD57090FDWR2G
Data Manual:NCD57090FDWR2G.PDF
Brand:ON
Particular Year:23+
Package:8-SOIC
Delivery Date:New and Original
Stock: 10pcs
The NCD57090FDWR2G are high current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and high reliability in high power applications. The devices accept complementary inputs and, depending on the pin configuration, are available with options for active Miller clamp (version A/D/F), negative supply (version B), and independent high and low level (OUTH and OUTL) driver outputs (version C/E) to facilitate system design. The drivers accommodate a wide range of input bias voltages and signal levels (3.3 V to 20 V).
Product Attributes
Technology: Capacitively coupled
Number of Channels: 1
Voltage - Isolation: 5000 Vrms
Common mode transient immunity (min): 100kV/µs
Propagation Delay tpLH / tpHL (max): 90ns, 90ns
Pulse Width Distortion (max): 30ns
Rise / Fall Time (typical): 13ns, 13ns
Current - Output High, Low: 6.5A, 6.5A
Current - Peak Output: 6.5A
Voltage - Output Supply: 0V ~ 32V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package/Shell: 8-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 8-SOIC
Certification Body: VDE
Applications
● Motor control
● Uninterruptible Power Supplies (UPS)
● Automotive applications
● Industrial power supplies
● Solar inverters
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ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
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