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This GaNFast™ power IC integrates a high-performance eMode GaN FET with an integrated gate driver for unprecedented high-frequency and high-efficiency operation. It also integrates GaNSense™ technology, which provides real-time, accurate sensing of voltage, current, and temperature to further improve performance and robustness, which is not possible with any discrete GaN or discrete silicon device.

Specification

Manufacturer: Navitas Semiconductor, Inc.  

Series: GaNFast™  

Switch Type: General Purpose  

Number of Outputs: 1  

Ratio - Input:Output: 1:1  

Output Configuration: High/Low  

Output Type: N-Channel  

Interface: PWM  

Voltage - Load: 700V  

Voltage - Supply (Vcc/Vdd): 9V ~ 24V  

Current - Output (Max): 12A  

On Resistance (Typ): 120mOhm  

Input Type: Non-Inverting  

Characteristics: PWM Input, Slew Rate Controlled  

Fault Protection: Current Limit (Fixed), Over Temperature, Short Circuit, UVLO  

Operating Temperature: -55°C ~ 150°C  

Mounting Type: Surface Mount  

Supplier Device Package: 30-QFN (6x8)  

Package/Housing: 30-PowerVQFN  

Base Product Number: NV6138A  

Topologies/Applications

AC-DC, DC-AC, DC-AC

High frequency operation up to 2 MHz

QR Flyback, AHB, Buck, Boost, Half Bridge, Full Bridge, LLC Resonant, Class D, PFC

Wireless Power, Solar Microinverters

LED Lighting, TV SMPS, Servers, Telecom

• 1.Is the inventory and price seen on the platform accurate?

  A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.

• 2.Are all our products genuine?

  A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.

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