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The NGW30T60M3DFQ is a rugged insulated gate bipolar transistor (IGBT) with third generation technology. It combines a carrier storage trench gate and a field cut-off (FS) structure. Rated up to 175 °C, it features optimised IGBT turn-off losses and has a short-circuit withstand time of 5 μL. This hard-switching 600 V, 30 A IGBT is optimised for high voltage, low-frequency industrial power inverter and servo motor drive applications.

Product Attributes

IGBT Type: Trench Field Cutoff

Voltage - Collector Breakdown (max): 600 V

Current - Collector (Ic) (max): 75 A

Current - Collector pulse (Icm): 90 A

Vce(on) at varying Vge, Ic (max): 1.7V @ 15V, 30A

Power - Max: 285 W

Switching Energy: 700µJ (on), 400µJ (off)

Input Type: Standard

Gate Charge: 130 nC

Td (on/off) value at 25°C: 60ns/180ns

Test Conditions: 400V, 30A, 10 Ohm, 15V

Reverse Recovery Time (trr): 110 ns

Operating Temperature: -40°C ~ 175°C (TJ)

Mounting Type: Through Hole

Package/Housing: TO-247-3

Supplier Device Package: TO247-3L

Applications

Motor drives for industrial and domestic appliances

● Servo motors running between 5-20 kW (up to 20 kHz) for robots, lifts, operating robots, in-line manufacturing, etc.

● Power inverters

● Uninterruptible power supply (UPS) inverters

● Photovoltaic (PV) strings

● Electric vehicle charging

● Induction heating

● Welding

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