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Product Description:N-Channel 650 V 55A (Tc) 187W (Tc) Through Hole TO-247-4L
Package:TO-247-4Product Description:Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK−7L
Package:D2PAK-7LProduct Description:Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200 V, M3S, TO-247-3L
Package:TO-247-3Product Description:MOSFET Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 44mohm, 650V, M2, TO247-4L
Package:TO-247-4LProduct Description:Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L
Package:TO-247-3Product Description:N-Channel Shielded Gate PowerTrench® MOSFET 100V, 45A, 14.4mΩ
Package:WDFN-8Product Description:Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200 V, M3S, TO-247-4L
Package:TO-247-4LProduct Description:Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200 V, M3S, TO-247-3L
Package:TO-247-3Product Description:Silicon Carbide (SiC) MOSFET- EliteSiC, 40 mohm, 1200 V, M3S, TO247-4L
Package:TO-247-4LProduct Description:Silicon Carbide (SiC) MOSFETs - EliteSiC Series, 40 mohm, 1200V, M3S, TO-247-4L Package
Package:TO-247-4LProduct Description:Silicon Carbide (SiC) MOSFET- EliteSiC, 70 mohm, 1200 V, M3S, TO247-4L
Package:TO-247-4Product Description:Photodiode 420nm 250ps 36-WBGA
Package:36-WBGAProduct Description:Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, TO-247-3L
Package:TO-247-3Product Description:Photodiode 420nm 160ps 8-WBGA
Package:8-WBGAProduct Description:Silicon Carbide (SiC) MOSFET - EliteSiC, 30 mohm, 1200 V, M3S, D2PAK-7L
Package:D2PAK-7LProduct Description:Photodiode 420nm 110ps 8-WBGA
Package:8-WBGAContact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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