sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:ROHM
Particular Year:24+
Package:TO-263-7
Delivery Date:New and original
Stock: 3000pcs
The SCT3160KWAHRTL is a 1200V, 17A SiC(silicon carbide) grooved MOSFET for automotive. Features include high voltage resistance, low on-resistance and fast switching speed. The device comes in a small TO-263-7 package and is designed TO comply with the AEC-Q101 standard.
Specifications of SCT3160KWAHRTL:
FET type: N channel
Technology: SiC (Silicon carbide junction transistor)
Drain-source voltage (Vdss) : 1200 V
Current at 25°C - Continuous Drain (Id) : 17A (Tc)
Drive voltage (Max Rds On, min Rds On) : 18V
On resistance (Max.) at different Id and Vgs: 208 milliohm @ 5A, 18V
Vgs(th) (Max.) : 5.6V@2.5mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 42 NC-@18 V
Vgs (Max) : +22V, -4V
Input capacitance (Ciss) at different Vds (Max.) : 398 PF-@800 V
FET function: -
Power dissipation (Max.) : -
Operating temperature: 175°C (TJ)
Class: Automobile class
Qualification: AEC-Q101
Mounting type: Surface mount type
Supplier device package: TO-263-7LA
Package/housing: TO-263-8, D2PAK (7-lead + flange), TO-263CA
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
ROHM Co., Ltd. is one of the worlds leading semiconductor manufacturers, headquartered in Kyoto, Japan, ROHM designs and manufactures semiconductors, integrated circuits and other electronic components. These components have a place in the rapidly cha…
RGA80TSX2HRC11
RGA80TSX2HRC11 is IGBT Transistors featuring low switching loss and low conduction loss. It is ideal for electric compressors and HV heaters for automotive applications and inverters for industrial applications.Feature of RGA80TSX2HRC11Qualified to AE…RGA80TSX2EHRC11
RGA80TSX2EHRC11 is IGBT Transistors featuring low switching loss and low conduction loss. It is ideal for electric compressors and HV heaters for automotive applications and inverters for industrial applications.Feature of RGA80TSX2EHRC11Qualified to …RGA80TRX2HRC15
RGA80TRX2HRC15 is IGBT Transistors featuring low switching loss and low conduction loss. It is ideal for electric compressors and HV heaters for automotive applications and inverters for industrial applications.Feature of RGA80TRX2HRC15Qualified to AE…RGA80TRX2EHRC15
RGA80TRX2EHRC15 is IGBT Transistors featuring low switching loss and low conduction loss. It is ideal for electric compressors and HV heaters for automotive applications and inverters for industrial applications.Feature of RGA80TRX2EHRC15Qualified to …BM3G007MUV-LBE2
The BM3G007MUV-LBE2 is a Nano Cap™ 650V GaN HEMT power level IC that is ideal for a wide range of electronic systems requiring high power density and high efficiency. The device integrates a 650V enhanced GaN HEMT and silicon driver.Features:Nano CAP…SCT3160KWATL
The SCT3160KWATL is a 1200V, 17A SiC(silicon carbide) grooved MOSFET in a small TO-263-7 package. Features include high voltage resistance, low on-resistance and fast switching speed.Specifications of SCT3160KWATL:FET type: N channelTechnology: SiCDra…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: