sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NOR Flash
Brand:INFINEON
Particular Year:25+
Package:FBGA-64
Delivery Date:New and Original
Stock: 2000pcs
S29GL01GT10FHI010 is a 1Gb (128M × 8-bit) parallel NOR Flash memory device packaged in a 64-FBGA (13×11mm) package. The chip is based on the MirrorBit® Eclipse™ architecture and is suitable for applications requiring high-speed, high-reliability non-volatile storage, such as embedded systems, industrial control, and automotive electronics.
S29GL01GT10FHI010 Specifications
Storage Capacity: 1Gb (128M × 8-bit / 64M × 16-bit)
Interface Type: Parallel
Access Time: 100ns (maximum)
Write Cycle Time: 60ns (word/page)
Supply Voltage: 2.7V to 3.6V
Operating Temperature: -40°C to +85°C
Package: 64-FBGA (13 × 11 mm)
Data Retention Time: 20 years (typical)
Erase/Write Cycles: 100,000 cycles (industrial grade)
Compliance Standards: RoHS, Lead-Free
S29GL01GT10FHI010 Product Features
MirrorBit® Eclipse™ Architecture: Based on 45nm process technology, offering high-density storage and low-power consumption.
High-Speed Read: Supports 100ns random access, suitable for real-time data processing.
Flexible Programming Modes: Supports single-word programming and multi-page programming (up to 512 bytes), enhancing write efficiency.
Sector Protection Mechanism: Advanced Sector Protection (ASP) supports volatile/non-volatile protection modes.
Low Power Design: Single-power supply operation (2.7V to 3.6V), suitable for battery-powered devices.
Industrial-Grade Reliability: Supports wide temperature operation from -40°C to +85°C, suitable for harsh environments.
Model
Brand
Package
Quantity
Describe
INFINEON
BGA-24
3000
FLASH - NOR Memory IC 256Mb SPI - Four I/O 133 MHz 24-BGA (8x6)
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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