sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:25+
Package:PG-TDSON-8
Delivery Date:New and Original
Stock: 5000pcs
The BSC020N03MSG is an N-channel power MOSFET featuring OptiMOS™ technology with extremely low on-resistance and gate charge in a TDSON-8 (5x6mm) package for a wide range of high efficiency power applications.
BSC020N03MSG Product Attributes
Product Category: MOSFETs
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TDSON-8
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds-Drain-source breakdown voltage: 30 V
Id-Continuous drain current: 25 A
Rds On-drain on-resistance: 1.7 mOhms
Vgs - gate-source voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 1 V
Qg-gate charge: 60 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
Pd-Power dissipation: 96 W
Channel mode: Enhancement
Trademark: OptiMOS
Configuration: Single
Fall Time: 14 ns
Forward transconductance - min: 60 S
Height: 1.27 mm
Length: 5.9 mm
Product Type: MOSFETs
Rise Time: 14 ns
Series: OptiMOS 3M
Transistor Type: 1 N-Channel
Typical Off Delay Time: 36 ns
Typical Turn-On Delay Time: 27 ns
BSC020N03MSG Benefits
Extended battery life
Improved EMI performance, eliminating the need for external buffer networks
Cost savings
Saves space
Reduced power loss
Potential Applications
On-board chargers
Laptops
Motherboards
DC-DC
VRD/VRM
Motor Control
Light Emitting Diode
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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