sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IPDQ60R022S7AXTMA1
Data Manual:IPDQ60R022S7AXTMA1.pdf
Brand:INFINEON
Particular Year:23+
Package:PG-HDSOP-22
Delivery Date:New original
Stock: 3000pcs
IPDQ60R022S7AXTMA1 (600V) CoolMOS™ S7A power device is suitable for xEV applications where MOSFETs are switched at low frequencies. The MOSFET is designed to provide a cost-optimized low on-resistance RDS(on) that increases power density and minimizes conduction losses. The S7A MOSFET is a vehicle grade AEC-Q101 device that meets the highest automotive quality requirements.
Product Specifications:
FET type: N channel
Technology: MOSFET (Metal oxide)
Drain-source voltage (Vdss) : 600 V
Current at 25°C - Continuous Drain (Id) : 24A (Tc)
Drive voltage (Max Rds On, min Rds On) : 12V
On-resistance (Max.) at different ids and Vgs: 22 milliohm @ 23A, 12V
Vgs(th) (Max.) : 4.5V@1.44mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 150 NC-@ 12 V
Vgs (Max.) : ±20V
Input capacitance (Ciss) at different Vds (Max.) : 5640 PF-@300 V
FET function: -
Power dissipation (Max.) : 416W (Tc)
Operating temperature: -40°C ~ 150°C (TJ)
Mounting type: Surface mount type
Supplier device package: PG-HDSOP-22-1
Package/shell: 22-PowerBSOP module
Basic product number: IPDQ60R
Model
Brand
Package
Quantity
Describe
INFINEON
PG-HSOF-8
12000
40 V, N-Ch, 0.77 mΩ max, Automotive MOSFET, TOLL (10x12), OptiMOS™-T2
INFINEON
PG-LHDSO-10
2000
Automotive-grade MOSFET N-channel 80 V 175A 205W PG-LHDSO-10
INFINEON
PG-TO252-3
15000
-30V, P-Ch, 4.5 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-P2
INFINEON
PG-TDSON-8
10000
40V, N-Ch, 2.8 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™-5
ST
TO-247-3
15000
Automotive Grade N-Channel 600 V, 0.052 Ohm Typ, 50 A MDmesh DM2 Power MOSFET, TO-247 Package
INFINEON
PG-TDSON-8
35000
40V, Dual N-Ch, 11.6 mΩ max, Automotive MOSFET, dual SS08 (5x6), OptiMOS™-T2
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