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Service Telephone:86-755-83294757
Trade Name:IPTC044N15NM5ATMA1
Data Manual:IPTC044N15NM5ATMA1.pdf
Brand:INFINEON
Particular Year:23+
Package:PG-HDSOP-16
Delivery Date:New original
Stock: 3000pcs
The IPTC044N15NM5ATMA1 (150V) OptiMOS™ 5 power MOSFETs are designed to increase system efficiency while reducing system costs. This MOSFET device has lower RDS(on) and factor of quality (RDS(on) x Qg) compared to other alternatives. Using new silicon technology, the product is optimized to meet and exceed energy efficiency and power density requirements.
Product Specifications:
FET type: N channel
Technology: MOSFET (Metal oxide)
Drain-source voltage (Vdss) : 150 V
Current at 25°C - Continuous drain (Id) : 19.4A (Ta), 174A (Tc)
Driving voltage (Max Rds On, min Rds On) : 8V, 10V
On-resistance (Max.) at different ids and Vgs: 4.4 milliohm @ 50A, 10V
Vgs(th) (Max.) for different ids: 4.6V@235µA
Gate charge (Qg) at different Vgs (Max.) : 89 NC-@10 V
Vgs (Max.) : ±20V
Input capacitance (Ciss) at different Vds (Max.) : 7000 PF-@ 75 V
FET function: -
Power dissipation (Max) : 3.8W (Ta), 300W (Tc)
Operating temperature: -55°C ~ 175°C (TJ)
Mounting type: Surface mount type
Supplier device package: PG-HDSOP-16-2
Package/shell: 16-PowerSOP module
Model
Brand
Package
Quantity
Describe
INFINEON
PG-TO263-3
5000
Surface Mount Type N-Channel 150 V 100 A (Tc) 300 W (Tc) PG-TO263-3
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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