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Service Telephone:86-755-83294757
Trade Name:IPT015N10NF2SATMA1
Data Manual:IPT015N10NF2SATMA1.pdf
Brand:INFINEON
Particular Year:23+
Package:PG-HSOF-8
Delivery Date:New original
Stock: 3000pcs
IPT015N10NF2SATMA1 (100V) StrongIRFET™ 2 Power MOSFETs are N-channel, normal level, 100% avalanche tested MOSFETs. Infineon StrongIRFET 2 MOSFET is optimized for a variety of applications.
Product Specifications:
FET type: N channel
Technology: MOSFET (Metal oxide)
Drain-source voltage (Vdss) : 100 V
Current at 25°C - Continuous drain (Id) : 35A (Ta), 315A (Tc)
Driving voltage (Max Rds On, min Rds On) : 6V, 10V
On-resistance (Max.) at different ids and Vgs: 1.5mm @ 150A, 10V
Vgs(th) (Max.) for different ids: 3.8V@267µA
Gate charge (Qg) at different Vgs (Max.) : 242 NC-@10 V
Vgs (Max.) : ±20V
Input capacitance (Ciss) for different Vds (Max.) : 11000 PF-@50V
FET function: -
Power dissipation (Max) : 3.8W (Ta), 300W (Tc)
Operating temperature: -55°C ~ 175°C (TJ)
Mounting type: Surface mount type
Supplier device package: PG-HSOF-8
Package/case: 8-PowerSFN
Model
Brand
Package
Quantity
Describe
INFINEON
PG-TO263-3
5000
Surface Mount Type N-Channel 150 V 100 A (Tc) 300 W (Tc) PG-TO263-3
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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