sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Automotive MOSFET
Brand:INFINEON
Particular Year:25+
Package:TO-252-3
Delivery Date:New and Original
Stock: 2500pcs
The IPD50P04P4L-11 is a P-channel, enhancement mode, logic level MOSFET with a maximum RDSon of 10.6 mΩ at 40 V. It is AEC certified, RoHS compliant, and suitable for reverse battery protection and high voltage side drive applications.
IPD50P04P4L-11 Product Attributes
Product Category: MOSFETs
Technology: Si
Mounting Style: SMD/SMT
Package / Case: DPAK-3 (TO-252-3)
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds-Drain-source breakdown voltage: 40 V
Id-Continuous drain current: 50 A
Rds On-drain on-resistance: 17.2 mOhms
Vgs - gate-source voltage: - 16 V, + 5 V
Vgs th - gate-source threshold voltage: 1.2 V
Qg - gate charge: 45 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 175 C
Pd-power dissipation: 58 W
Channel mode: Enhancement
Qualification: AEC-Q100
Configuration: Single
Drop Time: 39 ns
Height: 2.3 mm
Length: 6.5 mm
Rise Time: 9 ns
Series: XPD50P04
Transistor Type: 1 P-Channel
Typical Off Delay Time: 46 ns
Typical Turn-On Delay Time: 12 ns
Width: 6.22 mm
Potential Applications
High-side MOSFETs for motor bridges (half-bridges, H-bridges, three-phase motors)
Bridge configurations can be achieved using a 40V P-channel as the high-side device, eliminating the need for a charge pump
Model
Brand
Package
Quantity
Describe
INFINEON
PG-TDSON-8
25000
40V, N-Ch, 1.5 mΩ max, Automotive MOSFET, SS08 (5x6), OptiMOS™-5
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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