sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:RF MOSFET
Brand:NXP
Particular Year:24+
Package:DFN-6
Delivery Date:New and Original
Stock: 5000pcs
The A5G26H110NT4 is an Airfast RF power GaN amplifier, a 15W asymmetric Doherty GaN RF power amplifier designed for mobile base station applications requiring wide instantaneous bandwidth from 2496 to 2690MHz.
Features and Benefits
- High termination impedance for optimal broadband performance
- Improved linearisation of error vector amplitude using next generation signals
- Capable of withstanding very high output VSWR and wideband operating conditions
- Designed for low-complexity linearised systems
- Optimised for massive MIMO active antenna systems for 5G base stations
A5G26H110NT4 Product Attributes
Product Category: GaN Field Effect Transistors
Mounting Style: SMD/SMT
Package / Case: DFN-6
Number of Channels: 2 Channel
Vds - Drain-source breakdown voltage: 125 V
Id - Continuous drain current: 8.7 mA
Vgs - gate-source voltage: - 16 V
Vgs th-gate-source threshold voltage: - 3 V
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
Humidity sensitivity: Yes
Package: Reel
Product Type: GaN FETs
Series: A5G26H110N
Factory Package Quantity: 2500
Sub Category: Transistors
Technology: GaN-on-Si
Type: RF Power MOSFET
Model
Brand
Package
Quantity
Describe
NXP
NI-1230-4S
1000
750 W Continuous Wave, 700-1300 MHz, 50 V LDMOS RF Power Transistor
NXP
OM- 780- 4S4S
1000
A5G18H610W19N 1805-1880MHz, 85W Average, 48V Airfast® RF Power GaN Transistor
NXP
ACP-1230S-4L2S
1000
1805-1880 MHz, 71 W Average, 28 V Airfast® LDMOS RF Power Transistor
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NXP Semiconductors was founded in 2006. Its predecessor was the semiconductor business unit of Philips, the Netherlands, which was established in 1953 and headquartered in Eindhoven, the Netherlands. NXP was listed on Nasdaq in 2010.In 2015, NXP acqui…
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