sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:A5G35H055NT4
Data Manual:A5G35H055NT4.pdf
Brand:NXP
Particular Year:23+
Package:DFN-6
Delivery Date:New and Original
Stock: 1000pcs
The A5G35H055NT4 Airfast RF power GaN transistor is a 7.6W asymmetric Doherty RF power GaN transistor. It is designed for cellular base station applications that require extremely wide instantaneous bandwidth capability. The transistor covers the frequency range of 3400 to 3600 MHz.
Product Properties
Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors
Technology: GaN Si
Vds-drain-source breakdown voltage: 125 V
Operating frequency: 3.4 GHz to 3.6 GHz
Gain: 15.4 dB
Output power: 7.6 W
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: DFN-6
Humidity Sensitivity: Yes
Number of Channels: 2 Channel
Product Type: RF MOSFET Transistors
Series: A5G35H055N
Factory Package Quantity: 2500
Sub Category: MOSFETs
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: - 16 V
Vgs th-Gate-Source Threshold Voltage: - 3 V
Model
Brand
Package
Quantity
Describe
NXP
NI-1230-4S
1000
750 W Continuous Wave, 700-1300 MHz, 50 V LDMOS RF Power Transistor
NXP
OM- 780- 4S4S
1000
A5G18H610W19N 1805-1880MHz, 85W Average, 48V Airfast® RF Power GaN Transistor
NXP
ACP-1230S-4L2S
1000
1805-1880 MHz, 71 W Average, 28 V Airfast® LDMOS RF Power Transistor
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NXP Semiconductors was founded in 2006. Its predecessor was the semiconductor business unit of Philips, the Netherlands, which was established in 1953 and headquartered in Eindhoven, the Netherlands. NXP was listed on Nasdaq in 2010.In 2015, NXP acqui…
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