sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:3T23H300W23S
Data Manual:3T23H300W23S.pdf
Brand:NXP
Particular Year:23+
Package:ACP--1230S--4L2S
Delivery Date:New and Original
Stock: 1000pcs
The 3T23H300W23S third generation power amplifiers provide best-in-class performance for key parameters such as efficiency, gain, RF power and signal bandwidth.Airfast third generation technology significantly reduces the footprint required to deliver specific levels of RF output power. These amplifiers include 28V and 48V LDMOS transistors, and Airfast's third generation amplifiers are designed for asymmetrical Doherty amplifier architectures.
Features
● Designed for Cellular Base Station Applications
● Doherty architecture provides high performance
● Capable of withstanding extremely high output VSWR and wideband operating conditions
● RoHS compliant
● LDMOS transistors
● Designed for digital pre-distortion error correction systems
Model
Brand
Package
Quantity
Describe
NXP
NI-1230-4S
1000
750 W Continuous Wave, 700-1300 MHz, 50 V LDMOS RF Power Transistor
NXP
OM- 780- 4S4S
1000
A5G18H610W19N 1805-1880MHz, 85W Average, 48V Airfast® RF Power GaN Transistor
NXP
ACP-1230S-4L2S
1000
1805-1880 MHz, 71 W Average, 28 V Airfast® LDMOS RF Power Transistor
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NXP Semiconductors was founded in 2006. Its predecessor was the semiconductor business unit of Philips, the Netherlands, which was established in 1953 and headquartered in Eindhoven, the Netherlands. NXP was listed on Nasdaq in 2010.In 2015, NXP acqui…
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