sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:A5G18H610W19NR3
Data Manual:A5G18H610W19NR3.pdf
Brand:NXP
Particular Year:23+
Package:OM- 780- 4S4S
Delivery Date:New and Original
Stock: 1000pcs
The A5G18H610W19NR3 85W asymmetric Doherty GaN RF power transistor is designed for mobile base station applications operating at 1805 to 1880MHz frequencies and requiring wide instantaneous bandwidth. The characteristic parameters and performance of this part are suitable for applications operating in the 1805-1880MHz band. Performance cannot be guaranteed if the part is used in applications operating outside this range.
Characteristics
● High termination impedance to support excellent broadband performance
● Advanced high-performance internal package Doherty
● Linearisation error vector magnitude enhancement with next generation signals
● Withstands very high output VSWR and wideband operating conditions
● Plastic package
● RoHS compliant
Model
Brand
Package
Quantity
Describe
NXP
NI-1230-4S
1000
750 W Continuous Wave, 700-1300 MHz, 50 V LDMOS RF Power Transistor
NXP
ACP-1230S-4L2S
1000
1805-1880 MHz, 71 W Average, 28 V Airfast® LDMOS RF Power Transistor
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NXP Semiconductors was founded in 2006. Its predecessor was the semiconductor business unit of Philips, the Netherlands, which was established in 1953 and headquartered in Eindhoven, the Netherlands. NXP was listed on Nasdaq in 2010.In 2015, NXP acqui…
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