sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Automotive MOSFET
Brand:INFINEON
Particular Year:24+
Package:TDSON-8
Delivery Date:New and Original
Stock: 90000pcs
The IPC100N04S5-1R9 is an N-channel enhancement MOSFET designed for automotive applications and is part of Infineon's OptiMOS™ 5 series.
Product properties
Series: OptiMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-source voltage (Vdss): 40 V
Current at 25°C - Continuous Drain (Id): 100 A (Tc)
Drive Voltage (Max Rds On, Min Rds On:) 7V, 10V
On Resistance (Max) at Different Id, Vgs: 1.9 mOhm @ 50A, 10V
Vgs(th) at different Id (max): 3.4V @ 50µA
Gate Charge (Qg) (Max) at Vgs: 65 nC @ 10 V
Vgs (max): ±20V
Input capacitance (Ciss) at varying Vds (max): 3770 pF @ 25 V
Power Dissipation (Max): 100W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Grade: Automotive Grade
Qualification: AEC-Q101
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-34
Package/Housing: 8-PowerTDFN
Model
Brand
Package
Quantity
Describe
ST
TO-247-3
15000
Automotive Grade N-Channel 600 V, 0.052 Ohm Typ, 50 A MDmesh DM2 Power MOSFET, TO-247 Package
INFINEON
PG-TDSON-8
35000
40V, Dual N-Ch, 11.6 mΩ max, Automotive MOSFET, dual SS08 (5x6), OptiMOS™-T2
INFINEON
PG-TDSON-8
25000
40V, N-Ch, 1.5 mΩ max, Automotive MOSFET, SS08 (5x6), OptiMOS™-5
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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