sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:24+
Package:TDSON-8
Delivery Date:New and Original
Stock: 26800pcs
The BSC010N04LST is an OptiMOS™ 5 power MOSFET in a SuperSO8 package that demonstrates advanced technology and improved package operating temperature. The new combination improves power density as well as ruggedness.
The higher power of the 175°C TJ_MAX enables operation at higher junction temperatures or longer life at the same junction temperature than devices with lower ratings. Also, the safe operating area (SOA) has been expanded by 20%. This new package is more suitable for applications such as communications, motor drives, and servers.
BSC010N04LST Feature Description
Low RDS(on)
Optimised for synchronous rectification
SuperSO8 package, operating temperature increased to 175°C
BSC010N04LST Product Attributes
Product Category: MOSFETs
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TDSON-8
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds-Drain-source breakdown voltage: 40 V
Id-Continuous drain current: 100 A
Rds On-drain on-resistance: 1 mOhms
Vgs - gate-source voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 1.2 V
Qg - gate charge: 133 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
Pd-Power dissipation: 139 W
Channel mode: Enhancement
Configuration: Single
Fall-off time: 9 ns
Forward transconductance - min: 140 S
Rise time: 12 ns
Transistor Type: 1 N-Channel
Typical turn-off delay time: 46 ns
Typical turn-on delay time: 10 ns
BSC010N04LST Potential Applications
Motor drives
Servers
Communication
Model
Brand
Package
Quantity
Describe
INFINEON
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OptiMOS™ 6 power MOSFET 150 V normal level in D²PAK 3-pin package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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