sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:24+
Package:PQFN-8
Delivery Date:New and original
Stock: 5000pcs
The IRFH5215TRPBF device is a 150V single-channel N-channel StrongIRFET™ power MOSFET in a PQFN 5x6 package. The series is optimized for low RDS (on) and high current capabilities. These devices are ideal for low-frequency applications that require high performance and durability. The comprehensive product portfolio is suitable for a wide range of applications, including DC motors, battery management systems, inverters and DC-DC converters.
Specifications of IRFH5215TRPBF:
Product category: MOSFET
Technology: Si
Installation style: SMD/SMT
Package/box: PQFN-8
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds- drain-source breakdown voltage: 150 V
Id- Continuous drain current: 27 A
Rds On- drain-source on-resistance: 58 mOhms
Vgs - grid - source voltage: -20 V, + 20 V
Vgs TH-gate source threshold voltage: 5 V
Qg- Grid charge: 21 nC
Operating temperature: -55 °C to + 150°C
Pd- Power dissipation: 3.6W
Channel mode: Enhancement
Package: Reel
Encapsulation: Cut Tape
Encapsulation: MouseReel
Trademark: Infineon Technologies
Configuration: Single
Descent time: 2.9ns
Forward transconductance - Minimum: 21 S
Height: 0.83mm
Length: 6 mm
Model
Brand
Package
Quantity
Describe
INFINEON
PG-TDSON-8
10000
Силовой MOSFET OptiMOS™ 6 40 В нормального уровня с новейшей технологией Infineon
INFINEON
PG-TDSON-8
30000
N-channel power MOSFET 25 V 39 A (Ta), 58 A (Tc) 2.5 W (Ta), 28 W (Tc) PG-TDSON-8-5
INFINEON
PG-TDSON-8
20000
N-channel power MOSFET 25 V 33 A (Ta), 100 A (Tc) 2.5 W (Ta), 50 W (Tc) PG-TDSON-8-6
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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