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Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:24+
Package:D2PAK
Delivery Date:New and original
Stock: 6000pcs
The IPB042N10N3G is a 100V OptiMOS™ power MOSFET that provides a superior solution for high efficiency, high power density SMPS. Compared to the next generation of outstanding technology, the series has a 30% reduction in both R Ds (on) and FOM (Factor of quality).
Product Specifications:
Product: IPB042N10N3G
Technology: Si
Installation style: SMD/SMT
Package/Box: D2PAK-3 (TO-263-3)
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds- drain-source breakdown voltage: 100 V
Id- Continuous drain current: 100 A
Rds On- drain-source on-resistance: 4.2 mOhms
Vgs - grid - source voltage: -20 V, + 20 V
Vgs TH-gate source threshold voltage: 2 V
Qg- Grid charge: 88 nC
Operating temperature: -55 °C to + 175°C
Pd- Power dissipation: 214 W
Channel mode: Enhancement
Configuration: Single
Descent time: 14 ns
Forward transconductance - Minimum: 73 S
Height: 4.4mm
Length: 10 mm
Product type: MOSFETs
Rise time: 59 ns
Series: OptiMOS 3
Transistor type: 1 N-Channel
Typical shutdown delay: 48 ns
Typical connection delay: 27 ns
Model
Brand
Package
Quantity
Describe
INFINEON
PQFN-8
25000
40V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package
INFINEON
PG-WHTFN-9
1680
N Channel 100 V 26A (Ta), 276A (Tc) 3W (Ta), 333W (Tc) PG-WHTFN-9-U02
INFINEON
PG-WHSON-8
1680
N Channel 100 V 26A (Ta), 276A (Tc) 3W (Ta), 333W (Tc) PG-WHSON-8-U02
INFINEON
PG-WHSON-8
1680
OptiMOS™ power MOSFETs 80 V in PQFN 5x6 Source-Down DSC package with very low RDS(on).
INFINEON
PG-WHTFN-9
1680
OptiMOS™ power MOSFETs 80 V in PQFN 5x6 Source-Down Center-Gate DSC package with very low RDS(on)
INFINEON
PG-WHSON-8
1680
N Channel 60 V 42A (Ta), 445A (Tc) 3W (Ta), 333W (Tc) PG-WHSON-8-U02
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