sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide MOSFET Single Transistor
Brand:INFINEON
Particular Year:24+
Package:TO-247-4
Delivery Date:New and original
Stock: 2000pcs
IMZC120R053M2H CoolSiC™ MOSFET split 1200 V, 53 mΩ G2 in TO-247 4-pin, high creepage distance package, building on the benefits of first-generation technology with significant improvements, Advanced solutions for more cost-effective, efficient, compact, easy to design and reliable systems. It enhances better performance for all common combinations of hard switching operation and soft switching topologies for AC-DC, DC-DC, and DC-AC levels.
IMZC120R053M2H Features:
• VDSS = 1200 V when Tvj = 25°C
• If TC = 100°C, IDDC = 27 A
• When VGS = 18 V and Tvj = 25°C, RDS (on) = 53 mΩ
• Very low switching loss
• Overload operation up to Tvj = 200°C
• Short circuit withstand time 2μs
• Reference gate threshold voltage, VGS (th) = 4.2V
• Robust to parasitic conduction, 0 V turn-off grid voltage can be applied
• Robust body diodes for hard commutation
•.XT interconnect technology for best-in-class thermal performance
Applications:
• Universal Drive (GPD)
• Electric vehicle charging
• Online UPS/ Industrial UPS
• Solar optimizer
• String inverter
• Energy Storage System (ESS)
• Welding
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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