sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SCTWA30N120
Data Manual:SCTWA30N120.pdf
Brand:ST
Particular Year:23+
Package:HiP247
Delivery Date:New original
Stock: 3000pcs
The SCTWA30N120 1200V 45A Silicon Carbide (SiC) MOSFETs are packaged in HiP247 with excellent switching performance and an extremely low on-resistance RDS(on) performance metric per unit area, resulting in a more efficient and compact system. The power MOSFET device applications include solar inverters, UPS, motor drives, high voltage DC-DC converters and switching power supply.
Product Specifications:
FET type: N channel
Technology: SiCFET (Silicon carbide)
Drain-source voltage (Vdss) : 1200 V
Current at 25°C - Continuous Drain (Id) : 45A (Tc)
Drive voltage (Max Rds On, min Rds On) : 20V
On-resistance (Max.) at different ids and Vgs: 100 milliohm @ 20A, 20V
Vgs(th) at different ids (Max) : 3.5V@1mA (standard)
Gate charge (Qg) at different Vgs (Max.) : 105 N@20 V
Vgs (Max.) : +25V, -10V
Input capacitance (Ciss) for different Vds (Max.) : 1700 PF-@400 V
FET function: -
Power dissipation (Max) : 270W (Tc)
Operating temperature: -55°C ~ 200°C (TJ)
Installation type: Through hole
Supplier device package: HiP247™ long lead
Package/housing: TO-247-3
Basic product number: SCTWA30
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
3000
650V, 25mohm, N-Channel - EliteSiC, Silicon Carbide (SiC) MOSFET Transistor
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
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