sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SCT10N120AG
Data Manual:SCT10N120AG.pdf
Brand:ST
Particular Year:23+
Package:HiP247
Delivery Date:New original
Stock: 3000pcs
The SCT10N120AG 1200V 12A Silicon Carbide (SiC) MOSFETs are packaged in HiP247 with excellent switching performance and an extremely low on-resistance RDS(on) performance metric per unit area, resulting in a more efficient and compact system. ST's 1200V SiC MOSFETs feature a high temperature rating of 200°C to improve the thermal design of power electronics systems. Applications include motor drivers, electric vehicle chargers, high voltage DC-DC converters, and switching power supplies.
Product Specifications:
FET type: N channel
Technology: SiCFET (Silicon carbide)
Drain-source voltage (Vdss) : 1200 V
Current at 25°C - Continuous Drain (Id) : 12A (Tc)
Drive voltage (Max Rds On, min Rds On) : 20V
On-resistance (Max.) at different ids and Vgs: 690 milliohm @ 6A, 20V
Vgs(th) (Max.) for different ids: 3.5V@250µA
Gate charge (Qg) at different Vgs (Max.) : 22 N@20 V
Vgs (Max.) : +25V, -10V
Input capacitance (Ciss) at different Vds (Max.) : 290 PF-@ 400 V
FET function: -
Power dissipation (Max.) : 150W (Tc)
Operating temperature: -55°C ~ 200°C (TJ)
Installation type: Through hole
Supplier device package: HiP247™
Package/housing: TO-247-3
Basic product number: SCT10
Model
Brand
Package
Quantity
Describe
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
ST
HiP247-3
3000
1200 V Automotive grade Silicon Carbide Power MOSFET, 27 Mω, 56 A, HiP247
ON
TO-247-3
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
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