sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IXYN140N120A4
Data Manual:IXYN140N120A4.pdf
Brand:IXYS
Particular Year:23+
Package:SOT-227
Delivery Date:New original
Stock: 1000pcs
The IXYN140N120A4 grooved 1200V XPT™ GenX4™ IGBT was developed using proprietary XPT thin wafer technology and the most advanced fourth generation (GenX4™) grooved IGBT process. The insulated gate bipolar transistor has the characteristics of low thermal resistance, low energy consumption, fast switching, low trailing current and high current density. The device offers excellent durability under switching and short circuit conditions.
The through hole IGBT also features a square reverse bias Safe Working area (RBSOA) with a breakdown voltage of up to 1200V, making it ideal for unbuffered hard switching applications.
Product Specifications:
IGBT type: PT
Configuration: Single channel
Voltage-emitter breakdown (Max.) : 1200 V
Current - Collector (Ic) (Max.) : 380 A
Power - Max: 1070 W
Vce(on) (Max.) for different Vge and Ic: 1.7V @ 15V, 140A
Current-collector cutoff (Max.) : 25 µA
Input capacitance (Cies) for different Vce: 8.3NF-@25V
Input: Standard
NTC thermistor: None
Operating temperature: -55°C ~ 175°C (TJ)
Installation type: Base installation
Package/housing: SOT-227-4, miniBLOC
Supplier device package: SOT-227B
Basic product number: IXYN140
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IXYS is headquartered in Silicon Valley, USA. It was established in 1983. Main business: MOSFET, IGBT, Thyristor, SCR, rectifier bridge, diode, DCB block, power module, Hybrid, transistor, inverter, RF module and microcontrollers, etc.The business is…
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