sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IXYN140N120A4
Data Manual:IXYN140N120A4.pdf
Brand:IXYS
Particular Year:23+
Package:SOT-227
Delivery Date:New original
Stock: 1000pcs
The IXYN140N120A4 grooved 1200V XPT™ GenX4™ IGBT was developed using proprietary XPT thin wafer technology and the most advanced fourth generation (GenX4™) grooved IGBT process. The insulated gate bipolar transistor has the characteristics of low thermal resistance, low energy consumption, fast switching, low trailing current and high current density. The device offers excellent durability under switching and short circuit conditions.
The through hole IGBT also features a square reverse bias Safe Working area (RBSOA) with a breakdown voltage of up to 1200V, making it ideal for unbuffered hard switching applications.
Product Specifications:
IGBT type: PT
Configuration: Single channel
Voltage-emitter breakdown (Max.) : 1200 V
Current - Collector (Ic) (Max.) : 380 A
Power - Max: 1070 W
Vce(on) (Max.) for different Vge and Ic: 1.7V @ 15V, 140A
Current-collector cutoff (Max.) : 25 µA
Input capacitance (Cies) for different Vce: 8.3NF-@25V
Input: Standard
NTC thermistor: None
Operating temperature: -55°C ~ 175°C (TJ)
Installation type: Base installation
Package/housing: SOT-227-4, miniBLOC
Supplier device package: SOT-227B
Basic product number: IXYN140
Model
Brand
Package
Quantity
Describe
INFINEON
Module
1000
IGBT module Trench type field cutoff triphaser 1200 V 50 A base Install AG-ECONO2B
VISHAY
Module
1000
Power Module 800V Half Controlled Single Phase Bridge,20A 600V PFC and Half Bridge MOSFET, 40A
VISHAY
Module
1000
EMIPAK 1B PressFit Power Module650 V HF Output Rectification, Flexible Configuration, 20 A
VISHAY
Module
1000
EMIPAK 1B PressFit Power Module1200 V Silicon Carbide Single Phase Bridge, 30 A
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
IXYS is headquartered in Silicon Valley, USA. It was established in 1983. Main business: MOSFET, IGBT, Thyristor, SCR, rectifier bridge, diode, DCB block, power module, Hybrid, transistor, inverter, RF module and microcontrollers, etc.The business is…
IXA33IF1200HB
The IXA33IF1200HB high-speed IGBTs are high-speed, high-gain 1200V insulated gate bipolar transistors.The 1200V XPT high-speed IGBTs have high current ratings (105A to 160A, Tc = 25C) and are optimised for reduced switching losses in high-voltage appl…IXYH55N120B4H1
IXYH55N120B4H1 - 1200V, 55A XPT™ Gen4 IGBT Transistors with Sonic Diode, Extreme Light Punch Through IGBT for 5kHz – 30kHz SwitchingProduct DescriptionDeveloped using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT proce…IXYK120N120C3
The IXYK120N120C3 device is manufactured using the most advanced genx 3 IGBT process and an extremely light pass through (XPT) design platform, featuring high current processing capability, high-speed switching capability, low total energy loss and lo…IXYH55N120C4H1
IXYH55N120C4H1 - 1200V, 55A XPT™ Gen4 IGBT Transistors with Sonic Diode High Speed IGBT for 20kHz – 50kHz SwitchingProduct DescriptionDeveloped using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices…IXYH10N170C
The IXYH10N170C device uses proprietary thin-wafer XPT technology and the most advanced IGBT process design, featuring low thermal resistance, low tail current, low energy loss and high-speed switching capability. Applications include pulse circuits, …IXXX160N65B4
The IXXX160N65B4 device was developed using IXYS proprietary XPT thin wafer technology and the most advanced slotted IGBT process, featuring low thermal resistance, low power consumption, fast switching, low tail current and high current density. In a…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: