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Service Telephone:86-755-83294757
Trade Name:CY15V102QSN-108SXI
Data Manual:CY15V102QSN-108SXI.pdf
Brand:Cypress
Particular Year:23+
Package:8-SOIC
Delivery Date:New and Original
Stock: 1000pcs
The Excelon™-Ultra CY15V102QSN is a high-performance 2 Mbit non-volatile memory with an advanced ferroelectric process. Ferroelectric random access memory (i.e. F-RAM) is the same as RAM, a volatile memory that performs read and write operations. It offers 151 years of reliable data retention and solves the complexity, overhead and system-level reliability problems caused by serial flash and other non-volatile memories.
Unlike serial flash, the CY15V102QSN performs write operations at bus speed. The CY15V102QSN performs write operations at bus speed and does not cause delays in write operations. After each byte has been successfully transferred to the device, the data is immediately written to the memory array. At this point, the next bus cycle can be started without polling the data. In addition, this product offers a higher number of erasures than other non-volatile memories. The CY15V102QSN is capable of providing 1014 read/write cycles or supporting 100 million more write cycles than the EEPROM. Because of these features, the CY15x104QSN is ideal for non-volatile memory applications that require frequent or fast write operations. Examples range from data collection, where the number of write cycles is very important, to meeting industrial grade control, where the long write times of serial Flash can cause data loss.
The CY15V102QSN combines 2 Mbit F-RAM with a high speed quad SPI (QPI) SDR and DDR interface to enhance the non-volatile write capability of F-RAM technology. The device contains a read-only device ID and a unique ID feature that allows the SPI bus master to determine the manufacturer, product capacity, product version and unique ID of the device.
The device supports on-chip ECC logic to detect and correct single-bit errors within each 8-byte data cell. The device also includes an extension to provide double-bit error reporting in the 8-byte data cell. The CY15V102QSN also supports Cyclic Redundancy Check (CRC), which can be used to verify the integrity of the data stored in the memory array.
Features
2 Mbit ferroelectric random access memory (F-RAM) logically organised as 256K x 8
Provides 100 trillion (1014) read/write cycles for virtually unlimited endurance.
151 years data retention time (see Data Retention Time and Endurance on page 74)
NoDelay™ write operation
Advanced high-reliability ferroelectric process
Single and multiple I/O SPI
Serial bus interface SPI protocol
Supports SPI mode 0 (0, 0) and mode 3 (1, 1) for all SDR mode transitions
Supports SPI mode 0 (0, 0) for all DDR mode transitions
Extended I/O SPI protocols
Two-wire SPI (DPI) protocol
Four-wire SPI (QPI) protocol
SPI Clock Frequency
SPI SDR up to 108MHz
SPI DDR up to 54MHz
Memory read/write operations in XIP mode
Write protection, data security, data integrity
Hardware protection using the Write Protect (WP) pin
Software module protection
Embedded ECC and CRC for enhanced data integrity
ECC detects and corrects but-bit errors; in the event of a two-bit error, it will not correct the error but will report the error via the ECC status register
CRC will detect any accidental changes to the original data
Extended electronic signature
Device ID contains the manufacturer ID and product ID
Unique ID
User programmable serial number.
Dedicated 256-byte special sector F-RAM
Dedicated special sector for write and read operations
Contents can remain unchanged for up to 3 standard reflow cycles
High speed, low power consumption
SPI SDR frequency of 108 MHz with an effective current of 10 mA (typical)
16 mA (typical) effective current at 108 MHz QSPI SDR frequency and 54 MHz QSPI DDR frequency
Standby current of 110 µA (typ.)
Deep power-down mode current of 0.80 µA (typical)
Sleep mode current of 0.1 µA (typical)
Low voltage operation: CY15V102QSN: VDD = 1.71 V to 1.89 V
Operating temperature range: -40 °C to +85 °C
8 pin small form factor integrated circuit (SOIC) package
Restriction of Hazardous Substances (RoHS) compliant
Model
Brand
Package
Quantity
Describe
INFINEON
BGA-24
3000
FLASH - NOR Memory IC 256Mb SPI - Four I/O 133 MHz 24-BGA (8x6)
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