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The IMZC120R053M2 is a CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a TO-247 4-pin, high-crawl package that builds on the strengths of Generation 1 technology with significant enhancements to provide an advanced solution for cost-optimised, highly efficient, compact, easy-to-design and reliable systems. It offers improved hard-switching operation and soft-switching topologies for all common AC-DC, DC-DC and DC-AC level combinations.

IMZC120R053M2 Device Specifications

Manufacturer: Infineon

Product Category: Silicon Carbide MOSFETs

Package / Case: TO-247-4

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - drain-source breakdown voltage: 1.2 kV

Id-Continuous drain current: 38 A

Rds On-drain on-resistance: 53 mOhms

Vgs - gate-source voltage: - 10 V, + 25 V

Vgs th-Gate-source threshold voltage: 5.1 V

Qg - gate charge: 30 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Pd-Power dissipation: 182 W

Channel mode: Enhancement

Configuration: Single

Downtime: 5.9 ns

Forward transconductance - min: 9 S

Rise Time: 5.5 ns

Technology: SiC

Transistor Type: 1 N-Channel

Type: SiC MOSFET

Typical Off Delay Time: 10 ns

Typical turn-on delay time: 4.5 ns

Features

RDS(on) = 53 mΩ at VGS = 18 V, Tvj = 25°C

Very low switching losses

Wider maximum VGS range Maximum VGS range from -10 V to +25 V

Overload operating temperature up to Tvj = 200°C

Short-circuit withstand time 2 µs

Base gate threshold voltage 4.2 V

Robust parasitic conduction

XT interconnect technology

Tighter VGS(th) parameter distribution

Potential Applications

General Purpose Driver (GPD)

Electric Vehicle Charging

On-line UPS/Industrial UPS

Solar Optimiser

String Inverters

Energy Storage Systems (ESS)

Welding

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