sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:MOSFET Transistors
Brand:INFINEON
Particular Year:24+
Package:PG-WHSON-8
Delivery Date:New and Original
Stock: 3000pcs
IQDH35N03LM5CGSC (N-Channel Power MOSFET Transistor): OptiMOS™ Power MOSFET 30V in PQFN 5x6 Reduced Source DSC Package with Industry Leading RDS(on).
Overview:
IQDH35N03LM5SC - Power MOSFET transistors with low RDS(on) of 0.35 mOhm and excellent thermal performance for easy management of power losses. In addition, the power dissipated in the double-sided cooled package is five times higher compared to the overmolded package. This provides higher system efficiency and power density for a variety of end applications.
IQDH35N03LM5CGSC Advantage:
Minimal conduction losses
Reduced voltage overshoot
Increased maximum current capability
Fast switching
Fewer devices need to be connected in parallel
Lowest RDS(on) on a 5x6 footprint
Improved thermal performance
Easy thermal management
Optimal switching performance
Industry standard package
IQDH35N03LM5CGSC - Product Specifications:
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 30 V
Current at 25°C - Continuous Drain (Id): 66A (Ta), 700A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
On-resistance (max) at different Id, Vgs: 0.35 mOhm @ 50A, 10V
Vgs(th) at different Id (max): 2V @ 1.46mA
Gate Charge (Qg) (max) at varying Vgs: 114 nC @ 4.5 V
Vgs (max): ±20V
Input capacitance (Ciss) at varying Vds (max): 18000 pF @ 15 V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-WHSON-8-U02
Package/Housing: 8-PowerWDFN
Model
Brand
Package
Quantity
Describe
INFINEON
TO-220-3
3000
600V CoolMOS™ P7 Superjunction (SJ) MOSFET -- N-Channel Power MOSFET Transistor
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