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DG75S12T2 1200V/75A IGBT (with diode), IGBT power discrete devices have ultra-low conduction and switching losses.

Parameter: DG75S12T2

Package: T2

Rated current: 75A

Chip Type: Trench-FS Gen1

Rated voltage: 1200V

Circuit structure: Single Phase/H-bridge

Characteristics: TO-247PLUS-4L

Typical Applications

 Motor Drive Inverters

 AC and DC servo drive amplifiers

 Uninterruptible Power Supplies

Equivalent Circuit Schematic

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