sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:24+
Package:PG-HDSOP-22
Delivery Date:New and Original
Stock: 1000pcs
The IPDQ60T017S7 CoolMOS™ S7T with embedded temperature sensor improves the accuracy and robustness of junction temperature sensing while enabling easy implementation. The device is optimised for low frequency and high current switching applications. It is ideal for solid state relays, circuit breaker designs, and line rectification in SMPS.
A temperature sensor enhances the CoolMOS™ S7 for optimal utilisation of the power transistor.
Feature description of IPDQ60T017S7:
Optimised price/performance ratio
Tailored for low-frequency switching
Reduced parasitic source inductance
Seamless diagnostics
Accurate and fast long-term monitoring
High current capability
Enhanced protection
Optimised thermal device utilisation
Cutting-edge top-cooled package
Advantages of IPDQ60T017S7:
Minimal conduction losses
Improves system performance
Allows for more compact designs compared to EMRs
Lower long-term total cost of ownership
Enables higher power density designs
Reduces external sensing components
Leverages power transistors
Up to 40% more accurate than discrete sensors
4x faster than discrete sensor solutions
Optimise PCB space utilisation
Enables functional safety
Best-in-class thermal performance
Potential applications for IPDQ60T017S7:
Solid State Relays (SSR)
Solid State Circuit Breakers (SSCB)
Motor soft starters
Power Distribution Units (AC/DC)
Model
Brand
Package
Quantity
Describe
INFINEON
PG-TTFN-9
2500
OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down Center-Gate package
INFINEON
PG-TSON-8
2500
OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down package
ST
TO-247-4
3000
N Channel 650 V, 39 mOhm typical value, 54 A MDmesh M9 power MOSFET, TO-247-4
INFINEON
PG-HDSOP-22
1000
600 V CoolMOS™ S7T SJ MOSFET with integrated temperature sensor using Q-DPAK TSC (PG-HDSOP-22)
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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