sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:24+
Package:PG-HDSOP-22
Delivery Date:New and Original
Stock: 1000pcs
The CoolMOS™ S7T with embedded temperature sensor improves the accuracy and robustness of junction temperature sensing while enabling easy implementation. The device is optimised for low frequency and high current switching applications. It is ideal for solid state relays, circuit breaker designs, and line rectification in SMPS.
A temperature sensor enhances the CoolMOS™ S7 for optimal utilisation of the power transistor.
IPQC60T017S7- Surface Mount N-Channel 600 V 113A (Tc) 500 W (Tc) PG-HDSOP-22
IPQC60T017S7 Product Attributes:
Manufacturer: Infineon Technologies
Series: CoolMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 600 V
Current at 25°C - Continuous Drain (Id): 113A (Tc)
Drive voltage (max. Rds On, min. Rds On): 12V
On-resistance (max) at different Id, Vgs: 17 mOhm @ 29A, 12V
Vgs(th) at different Id (max): 4.5V @ 1.88mA
Gate Charge (Qg) (Max) at Vgs: 196 nC @ 12 V
Vgs (max): ±20V
Input capacitance (Ciss) at varying Vds (max): 7370 pF @ 300 V
Power Dissipation (Max): 500W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22
Package/Housing: 22-PowerBSOP Module
Model
Brand
Package
Quantity
Describe
ST
TO-263
32000
N-channel 100 V, 9 mOhm typical, 110 A STripFET II power MOSFET, D2PAK package
ST
PowerFLAT 8x8
3000
N-channel 600 V, 175 mOhm typical value, 15 A MDmesh DM6 power MOSFET, PowerFLAT 8x8 HV package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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