sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:24+
Package:TO-220FP-3
Delivery Date:New and Original
Stock: 31518pcs
The SPA16N50C3 500V CoolMOS™ C3 is Infineon's third CoolMOS™ series and the C3 is the workhorse of the portfolio.
Specification
Manufacturer: Infineon Technologies
Series: CoolMOS™
Package: Tubes
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 560 V
Current at 25°C - Continuous Drain (Id): 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
On-resistance (max) at different Id, Vgs: 280 mOhm @ 10A, 10V
Vgs(th) at different Id (max): 3.9V @ 675µA
Gate Charge (Qg) at Vgs (max): 66 nC @ 10 V
Vgs (max): ±20V
Input capacitance (Ciss) at varying Vds (max): 1600 pF @ 25 V
Power Dissipation (Max): 34W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-31
Package/Housing: TO-220-3 Complete Package
Advantages
High efficiency, high power density
Superior cost/performance ratio
High reliability
Ease of use
Potential Applications
Servers
Communications
Consumer products
Computer Power Supplies
Adapters
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-3
3385
100V Single N-Channel StrongIRFET™ Power MOSFET in a TO-247 package
INFINEON
PG-TO263-7
1000
Fully optimized best-in-class performance Transistors at 120 V
INFINEON
PG-TSON-8
1000
OptiMOS™ power MOSFETs 40 V logic level in PQFN 5x6 Source-Down package with very low RDS(on)
INFINEON
PG-TTFN-9
1000
OptiMOS™ power MOSFETs 60 V in PQFN 5x6 mm2 Source-Down package with industry leading RDS(on)
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
SAK-TC1791F-512F240EP AB
The TC1791 is a high performance microcontroller with a TriCore CPU, program and data memory, bus, bus arbitration, interrupt controller, peripheral control processor and DMA controller and several on-chip peripherals.The TC1791 is designed to meet th…F3L8MR12W2M1HPB11
The F3L8MR12W2M1HPB11 is a three-level 1200 V CoolSiC™ MOSFET Easy module.EasyPACK™ 2B 1200 V / 8 mΩ three-level module featuring CoolSiC™ MOSFETs with enhanced first-generation trench technology, integrated NTC temperature sensor, pre-coated ther…FS150R12KT4
TS150R12KT4 is an Infineon EconoPACK™3 1200 V, 150 A sixpack IGBT module utilizing a fast TRENCHSTOP™ IGBT4, a fourth generation emitter control diode and an NTC temperature sensor.IPB038N12N3G
The Infineon IPB038N12N3G N-channel OptiMOS™ power MOSFETs are leading power MOSFETs offering the highest power density and energy efficient solutions. Ultra-low gate and output charges and the lowest on-resistance in a small package size make them i…CY62157G18-55BVXA
The CY62157G18-55BVXA is a high-performance CMOS low power (MoBL) SRAM device with built-in ECC in a 48-ball VFBGA package. The performance of Infineon MOBL™ ultra-reliable asynchronous SRAM meets the needs of a wide range of high-reliability industr…CY62157G18-55BVXI
The CY62157G18-55BVXI is a high-performance CMOS Low power (MoBL) SRAM device with built-in ECC in a 48-ball VFBGA package. The performance of Infineon MOBL™ ultra-reliable asynchronous SRAM meets the needs of a wide range of high-reliability industr…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: