sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:24+
Package:TO-220FP-3
Delivery Date:New and Original
Stock: 31518pcs
The SPA16N50C3 500V CoolMOS™ C3 is Infineon's third CoolMOS™ series and the C3 is the workhorse of the portfolio.
Specification
Manufacturer: Infineon Technologies
Series: CoolMOS™
Package: Tubes
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 560 V
Current at 25°C - Continuous Drain (Id): 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
On-resistance (max) at different Id, Vgs: 280 mOhm @ 10A, 10V
Vgs(th) at different Id (max): 3.9V @ 675µA
Gate Charge (Qg) at Vgs (max): 66 nC @ 10 V
Vgs (max): ±20V
Input capacitance (Ciss) at varying Vds (max): 1600 pF @ 25 V
Power Dissipation (Max): 34W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-31
Package/Housing: TO-220-3 Complete Package
Advantages
High efficiency, high power density
Superior cost/performance ratio
High reliability
Ease of use
Potential Applications
Servers
Communications
Consumer products
Computer Power Supplies
Adapters
Model
Brand
Package
Quantity
Describe
INFINEON
PG-TTFN-9
2500
OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down Center-Gate package
INFINEON
PG-TSON-8
2500
OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down package
ST
TO-247-4
3000
N Channel 650 V, 39 mOhm typical value, 54 A MDmesh M9 power MOSFET, TO-247-4
INFINEON
PG-HDSOP-22
1000
600 V CoolMOS™ S7T SJ MOSFET with integrated temperature sensor using Q-DPAK TSC (PG-HDSOP-22)
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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