sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:24+
Package:PG-TO263-3
Delivery Date:New and Original
Stock: 22500pcs
The Infineon IPB038N12N3G N-channel OptiMOS™ power MOSFETs are leading power MOSFETs offering the highest power density and energy efficient solutions. Ultra-low gate and output charges and the lowest on-resistance in a small package size make them ideal for meeting the demanding requirements of voltage regulator solutions in server, datacom and telecom applications. Ultra-fast switching control FETs and low EMI synchronous FETs provide easy-to-design solutions. Infineon's N-channel OptiMOS™ power MOSFETs provide excellent gate charge and are optimised for DC-DC conversion.
Feature Description
Superior switching performance
World's lower (R Ds(on))
Very low Qg and Qgd
Excellent gate charge x R DS(on) products (FOM)
RoHS compliant - halogen free
MSL1 rating 2
Benefits
Environmentally friendly
Improved efficiency
Very high power density
Reduces required parallel connections
Very low board space consumption
Easy product design
Potential Applications
Synchronous rectification of AC-DC SMPS
Motor control for 12-48V systems (i.e. fans for servers, household vehicles, power tools, trucks)
Isolated DC-DC converters (communication and datacom systems)
Switches and circuit breakers for 48V systems
Class D audio amplifiers
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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