sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:24+
Package:PG-TO263-3
Delivery Date:New and Original
Stock: 22500pcs
The Infineon IPB038N12N3G N-channel OptiMOS™ power MOSFETs are leading power MOSFETs offering the highest power density and energy efficient solutions. Ultra-low gate and output charges and the lowest on-resistance in a small package size make them ideal for meeting the demanding requirements of voltage regulator solutions in server, datacom and telecom applications. Ultra-fast switching control FETs and low EMI synchronous FETs provide easy-to-design solutions. Infineon's N-channel OptiMOS™ power MOSFETs provide excellent gate charge and are optimised for DC-DC conversion.
Feature Description
Superior switching performance
World's lower (R Ds(on))
Very low Qg and Qgd
Excellent gate charge x R DS(on) products (FOM)
RoHS compliant - halogen free
MSL1 rating 2
Benefits
Environmentally friendly
Improved efficiency
Very high power density
Reduces required parallel connections
Very low board space consumption
Easy product design
Potential Applications
Synchronous rectification of AC-DC SMPS
Motor control for 12-48V systems (i.e. fans for servers, household vehicles, power tools, trucks)
Isolated DC-DC converters (communication and datacom systems)
Switches and circuit breakers for 48V systems
Class D audio amplifiers
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-3
3385
100V Single N-Channel StrongIRFET™ Power MOSFET in a TO-247 package
INFINEON
PG-TO263-7
1000
Fully optimized best-in-class performance Transistors at 120 V
INFINEON
PG-TSON-8
1000
OptiMOS™ power MOSFETs 40 V logic level in PQFN 5x6 Source-Down package with very low RDS(on)
INFINEON
PG-TTFN-9
1000
OptiMOS™ power MOSFETs 60 V in PQFN 5x6 mm2 Source-Down package with industry leading RDS(on)
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