sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:Qorvo
Particular Year:24+
Package:D2PAK-3
Delivery Date:New and original
Stock: 3000pcs
The UJ3C065080B3 is a 650 V, 80 mohm SiC FET in a D2PAK-3L package, ideal for switching inductive loads and any application requiring standard gate drive.
Specifications
Technology: SiC
Installation style: SMD/SMT
Package/Box: D2PAK-3 (TO-263-3)
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds- drain-source breakdown voltage: 650 V
Id- Continuous drain current: 25 A
Rds On- drain-source on-resistance: 100 mOhms
Vgs - grid - source voltage: -25 V, + 25 V
Vgs TH-gate source threshold voltage: 4 V
Qg- Grid charge: 51 nC
Minimum operating temperature: -55 °C
Maximum operating temperature: + 175°C
Pd- Power dissipation: 115 W
Channel mode: Enhancement
Qualification: AEC-Q101
Brand name: SiC FET
Series: UJ3C
Configuration: Single
Descent time: 11 ns
Product type: MOSFET
Rise time: 13 ns
Typical shutdown delay: 59 ns
Typical connection delay: 18 ns
Unit weight: 3.082g
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Headquartered in North Carolina, Qorvo brings together more than 30 years of design experience and employs nearly 8,000 people worldwide. Qorvo has two production bases in China, located in Beijing and Dezhou, Shandong Province. Qorvo(Beijing) was est…
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