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The UF3C065080K3S is a 650 V, 80 mohm SiC FET discrete transistor. Packaged in TO-247-3L, this device features an ultra-low gate charge and excellent reverse recovery characteristics, making it ideal for switching inductive loads when used with the recommended RC buffer and any application requiring a standard gate drive.

Specifications

Product category: MOSFET

Technology: SiC

Installation style: through hole

Package/housing: TO-247-3

Transistor polarity: N-Channel

Number of channels: 1 Channel

Vds- drain-source breakdown voltage: 650 V

Id- Continuous drain current: 31 A

Rds On- drain-source on-resistance: 100 mOhms

Vgs - grid - source voltage: -12 V, + 12 V

Vgs TH-gate source threshold voltage: 6 V

Qg- Grid charge: 51 nC

Minimum operating temperature: -55 °C

Maximum operating temperature: + 175°C

Pd- Power dissipation: 190 W

Channel mode: Enhancement

Qualification: AEC-Q101

Brand name: SiC FET

Series: UF3C

Configuration: Single

Descent time: 11 ns

Product type: MOSFET

Rise time: 14 ns

Transistor type: 1 N-Channel

Typical shutdown delay: 54 ns

Typical connection delay: 25 ns

Unit weight: 6 g

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