sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SiC MOSFETs
Brand:Qorvo
Particular Year:24+
Package:D2PAK-7L
Delivery Date:New and Original
Stock: 9000pcs
The UJ4SC075018B7S is a 750V, 18mW G4 SiC FET that uses a unique ‘cascade’ circuit configuration to co-package a normally-open SiC JFET with a Si MOSFET to produce a normally-closed SiC FET device. The device's standard gate drive characteristics provide a true ‘replacement’ for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. Available in a D2 PAK-7L package, the device features ultra-low gate charge and excellent reverse recovery characteristics, making it ideally suited for inductive load switching and any application requiring a standard gate drive.
Specifications
FET Type: N-Channel
Technology: SiCFET (Common Source Common Gate SiCJFET)
Drain-Source Voltage (Vdss): 750 V
Current at 25°C - Continuous Drain (Id): 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
On Resistance (Max) at Different Id, Vgs: 23 milliohms @ 50A, 12V
Vgs(th) at different Id (max): 6V @ 10mA
Gate Charge (Qg) at Vgs (max): 37.8 nC @ 15 V
Vgs (max): ±20V
Input capacitance (Ciss) at different Vds (max): 1414 pF @ 400 V
Power Dissipation (Max): 259W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package/Housing: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Typical Applications
Automotive chargers
Soft-switching DC-DC converters
Battery charging (DC fast charging and industrial)
IT/Server Power Supplies
Model
Brand
Package
Quantity
Describe
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 58A (Tc) 156W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N channel 650 V 20A (Tc) 76W (Tc) TO-247-4L (X)
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Headquartered in North Carolina, Qorvo brings together more than 30 years of design experience and employs nearly 8,000 people worldwide. Qorvo has two production bases in China, located in Beijing and Dezhou, Shandong Province. Qorvo(Beijing) was est…
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