sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SiC MOSFETs
Brand:Qorvo
Particular Year:24+
Package:D2PAK-7L
Delivery Date:New and Original
Stock: 9000pcs
The UJ4SC075011B7S is a silicon carbide field effect transistor (SiC FET) in a D2PAK-7L package. It uses a unique ‘cascade’ circuit configuration that co-packages a normally open SiC JFET with a Si MOSFET to produce a normally closed SiC FET device. The device's standard gate drive characteristics provide a true ‘replacement’ for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. Available in a D2 PAK-7L package, the device features ultra-low gate charge and excellent reverse recovery characteristics, making it ideally suited for inductive load switching and any application requiring standard gate drive.
Features
VDS rating: 750V
Low RDS(on): 9mΩ to 60mΩ
Key Quality Factors Enabling Next Generation High Performance Power Supply Designs
Best-in-class RDS(on)x area
Improved Qrr and Eon/Eoff losses for a given RDS(on)
Reduced Coss(er)/Eoss and Coss(tr)
Excellent body diode performance (Vf<2V)
Low gate charge
175°C maximum operating temperature
Excellent reverse recovery (Qrr)
Threshold voltage: 4.8VG(th)
Antistatic protection, HBM class 2
6.7mm high creepage, 7.3mm clearance distance SMT
Advanced silver sintering die attach superior thermal performance
D2PAK-7L package
Applications
Electric vehicle charging
Photovoltaic inverters
Switching Power Supplies
Power factor correction modules
Motor Drivers
Induction heating
Model
Brand
Package
Quantity
Describe
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 58A (Tc) 156W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N channel 650 V 20A (Tc) 76W (Tc) TO-247-4L (X)
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Headquartered in North Carolina, Qorvo brings together more than 30 years of design experience and employs nearly 8,000 people worldwide. Qorvo has two production bases in China, located in Beijing and Dezhou, Shandong Province. Qorvo(Beijing) was est…
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