sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:24+
Package:TTFN-9
Delivery Date:New and Original
Stock: 3385pcs
The power MOSFET IQDH35N03LM5CG 30 V is available in a PQFN 5x6 mm2 drop-source package. The device features the industry's lowest 0.35 mΩ RDS(on) and excellent thermal performance for easy power loss management. This brings higher system efficiency and power density to a variety of end-use applications, such as SMPS, telecom power, and intermediate bus conversion in high-performance computing, such as hyperscale data centres and AI server farms.
Features
N-channel, logarithmic scale
Extremely low on-resistance RDS (on)
Excellent thermal resistance
Passes 100% aging test
Lead-free plating; RoHS compliant
Specification
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds-Drain-source breakdown voltage: 30 V
Id-Continuous drain current: 700 A
Rds On-drain on-resistance: 350 uOhms
Vgs - gate-source voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 2 V
Qg-gate charge: 91 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
Pd-power dissipation: 278 W
Channel mode: Enhancement
Trademark: OptiMOS
Series: OptiMOS 5
Potential Applications
Servers
Data communications
High performance computing
Telecommunications
SMPS
Tightening
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-3
3385
100V Single N-Channel StrongIRFET™ Power MOSFET in a TO-247 package
INFINEON
PG-TO263-7
1000
Fully optimized best-in-class performance Transistors at 120 V
INFINEON
PG-TSON-8
1000
OptiMOS™ power MOSFETs 40 V logic level in PQFN 5x6 Source-Down package with very low RDS(on)
INFINEON
PG-TTFN-9
1000
OptiMOS™ power MOSFETs 60 V in PQFN 5x6 mm2 Source-Down package with industry leading RDS(on)
ST
8-PowerVDFN
2000
Surface Mount N-channel 600 V 21A (Tc) 150W (Tc) PowerFlat™ (8x8) HV
ST
8-PowerVDFN
2000
Surface mount N-channel 600 V 19 A 125mW (Ta), 3W (Tc) PowerFlat™ (8x8) HV
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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