sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:24+
Package:TO-220-3
Delivery Date:New and Original
Stock: 17000pcs
The IPA50R280CE 500V CoolMOS CE power transistor is a high-voltage power MOSFET technology platform designed according to the Super Junction principle (SJ) to meet customer requirements. The cost of the new series of CoolMOS™ is optimised to meet typical consumer requirements without sacrificing the high quality and reliability of CoolMOS™, while still being attractively priced.
IPA50R280CE Specifications:
Product Category: MOSFETs
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220FP-3
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds-Drain-source breakdown voltage: 500 V
Id-Continuous drain current: 13 A
Rds On-drain on-resistance: 280 mOhms
Vgs - gate-source voltage: - 20 V, + 20 V
Qg - Gate charge: 32.6 nC
Maximum operating temperature: + 150 C
Pd - power dissipation: 30 W
Trade Name: CoolMOS
Series: CoolMOS CE
Configuration: Single
Height: 16.15 mm
Length: 10.65 mm
Product Type: MOSFET
Factory Package Quantity: 500
Sub Category: MOSFETs
Transistor Type: 1 N-Channel
Width: 4.85 mm
Unit Weight: 2 g
Potential Applications
Consumer
Lighting
PC Silver Box
Model
Brand
Package
Quantity
Describe
INFINEON
D2PAK-7
1000
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INFINEON
8-PowerTDFN
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OptiMOS™ power MOSFETs 40 V logic level in PQFN 5x6 Source-Down package with very low RDS(on)
INFINEON
9-PowerTDFN
1000
OptiMOS™ power MOSFETs 60 V in PQFN 5x6 mm2 Source-Down package with industry leading RDS(on)
ST
8-PowerVDFN
2000
Surface Mount N-channel 600 V 21A (Tc) 150W (Tc) PowerFlat™ (8x8) HV
ST
8-PowerVDFN
2000
Surface mount N-channel 600 V 19 A 125mW (Ta), 3W (Tc) PowerFlat™ (8x8) HV
ST
8-PowerVDFN
2000
Surface Mount N-channel 600 V 21A (Tc) 140W (Tc) PowerFlat™ (8x8) HV
ST
8-PowerVDFN
2000
Surface mount N-channel 650 V 4.3A (Ta), 22.5A (Tc) 2.8W (Ta), 189W (Tc) PowerFlat™ (8x8) HV
ST
8-PowerVDFN
2000
Surface Mount N-channel 600 V 45A (Tc) 174W (Tc) PowerFlat™ (8x8) HV
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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