sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:RF Amplifier
Brand:Renesas
Particular Year:24+
Package:BGA
Delivery Date:New and Original
Stock: 1200pcs
The RAA270205 is a millimetre wave radar transceiver for automotive ADAS/AD with 4TX/4RX channels and an on-board ranging-FFT engine.The RAA270205 is the first high-performance 28nm RFCMOS radar transceiver of its kind.The RAA270205 is equipped with 4Tx and 4Rx channels and supports up to 16 MIMO channels with extremely high angular accuracy. The transceiver covers the frequency bands reserved for long-, medium- and short-range millimetre wave radars as well as imaging radars with the highest possible range resolution.
Product Features
76-81 GHz
4Tx, 4RX channels, up to 16 MIMO channels
Range output directly to the obstacle using on-board ranging FFT engine
Small, easy-to-integrate eWBL package
Cascade function increases channel count and radar resolution
High output power for longer range, 13dBm per channel, 19dBm total output power
Low noise figure
Low phase noise
Fast chirp and high chirp linearity
Low power consumption
ADC sampling speed up to 112.5MSPS
4-channel MIPI-CSI2 interface with output up to 14.4Gbps
Typical applications
Imaging radar
Adaptive Cruise Control (ACC)
Autonomous Emergency Braking (AEB)
Lane Change Assist (LCA)
Blind Spot Detection (BSD)
Front/Rear Cross Traffic Alert (FCTA/RCTA)
Model
Brand
Package
Quantity
Describe
TI
UQFN-10
3000
Automotive 12-bit, 3.3kSPS, single-channel Delta-σ ADC with PGA, oscillator, voltage reference, comparator and I2C
TI
FCCSP-102
3000
Single-chip low-power 76GHz to 81GHz automotive millimeter-wave radar sensors
TI
FCCSP-102
3000
Single-chip low-power 76GHz to 81GHz automotive millimeter-wave radar sensors
TI
FCCSP-102
3000
Single-chip low-power 76GHz to 81GHz automotive millimeter-wave radar sensors
TI
FCCSP-102
2000
Single-chip low-power 57-GHz to 64-GHz automotive mmWave radar sensor
TI
FCBGA-180
1000
Radar-based sensors Sensors CAN, GPIO, I²C, LVDS, SPI, UART Outputs
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Renesas Technology is one of the worlds top ten semiconductor chip suppliers, and has achieved the worlds highest market share in many fields such as mobile communications, automotive electronics, and PC/AV.Renesas Technology was formally established …
TP65H100G4LSGB
The TP65H100G4LSGB is a 650V SuperGaN GaN FET launched by Renesas. It adopts the Gen IV technology platform and combines high-voltage GaN HEMT with low-voltage silicon MOSFET, featuring excellent reliability and performance.Product attributesFET type:…TP65H100G4PS
The TP65H100G4PS is a 650V GaN FET (gallium nitride field effect transistor) from Renesas that uses Gen IV SuperGaN platform technology with high reliability and low loss characteristics.Main specificationsFET type: N-channelTechnology: GaNFET (Galliu…TP65H035G4YS
The TP65H035G4YS is a SuperGaN FET device from Renesas, which comes in a TO-247-4L package with a 35mΩ on-resistance and a Kelvin source terminal design. The TP65H035G4YS device combines the most advanced high-voltage GaN HEMT and low-voltage silicon…TP65H035G4WSQA
The TP65H035G4WSQA 650V 35mΩ gallium nitride (GaN) FET is a normally closed device built using Renesas GenIV platform. By using proprietary technology, the internal package inductance has been reduced and the assembly process has been simplified. It …TP65H070G4RS
The TP65H070G4RS is Renesas fourth-generation SuperGaN technology FET device in a TOLT package (top-cooling surface mount) for use in scenarios requiring efficient thermal management and high reliability. Its main specifications are as follows:FET typ…TP65H070G4PS
The TP65H070G4PS is a 650V, 70mΩ Gallium nitrided (GaN) field-effect transistor (FET) in TO-220 package manufactured by (Renesas). This device features low on-resistance and excellent switching performance, making it suitable for high-efficiency powe…Contact Number:86-755-83294757
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