sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NVMYS2D1N04CLTWG
Data Manual:NVMYS2D1N04CLTWG.PDF
Brand:ON
Particular Year:23+
Package:LFPAK4
Delivery Date:New original
Stock: 3000pcs
40V Integrated Circuit Chip NVMYS2D1N04CLTWG Single N-Channel Transistors LFPAK4
Product Description
NVMYS2D1N04CLTWG is N-Channel Single FETs MOSFETs Transistors, Low RDS(on) to Minimize Conduction Losses, Small Footprint (5x6 mm) for Compact Design, package is LFPAK4.
Product Attributes
Vds - Drain-Source Breakdown Voltage: 40 V
Id - Continuous Drain Current: 139 A
Rds On - Drain-Source Resistance: 2.15 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
Qg - Gate Charge: 50 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 83 W
Configuration: Single
Fall Time: 9.4 ns
Forward Transconductance - Min: 116 S
Product Type: MOSFET
Rise Time: 8.3 ns
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